power transistors 1 publication date: february 2003 sjd00095bed 2SC1847 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0886 features ? output of 4 w can be obtained by a complementary pair with 2sa0886 ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 1 ma, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 040v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 01 a collector-emitter cutoff current (base open) i ceo v ce = 10 v, i b = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 010 a forward current transfer ratio * h fe v ce = 5 v, i c = 1 a 80 220 ? collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 0.2 a 1 v base-emitter saturation voltage v be(sat) i c = 2 a, i b = 0.2 a 1.5 v transition frequency f t v cb = 5 v, i e = ? 0.5 a, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 20 v, i e = 0, f = 1 mhz 35 pf (common base, input open circuited) 1: emitter 2: collector 3: base to-126b-a1 package 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 rank q r h fe 80 to 160 120 to 220 parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 40 v emitter-base voltage (collector open) v ebo 5v collector current i c 1.5 a peak collector current i cp 3a collector power dissipation p c 1.2 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c
2SC1847 2 sjd00095bed p c ? t a i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i e c ob ? v cb v cer ? r be i cbo ? t a 0 160 40 120 80 0 1.6 1.2 0.8 0.4 collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 1.0 3.0 2.0 4.0 3.5 2.5 1.5 0.5 010 24 8 6 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c 30ma 35ma 20ma 25ma 10ma 5ma 15ma i b =40ma 0.001 0.01 0.1 1 0.01 0.1 1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 ?5?c 25?c t c =100?c 0.01 0.01 1 0.1 0.1 1 10 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =10 t c =?5?c 25?c 100?c 0.01 1 0.1 1 10 100 1000 forward current transfer ratio h fe collector current i c (a) v ce =5v t c =100?c 25?c ?5?c ? 0.01 ? 0.1 ? 1 ? 10 0 240 200 160 120 80 40 transition frequency f t (mhz) emitter current i e (a) v cb =5v f=200mhz t c =25?c 0 1 120 100 80 60 40 20 10 100 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0 60 50 40 30 20 10 0.001 0.01 0.1 1 10 base-emitter resistance r be (k ? ) collector-emitter voltage (resistor between b and e) v cer (v) t c =25?c 0 100 80 60 40 20 1 1000 100 10 i cbo ( t a ) i cbo ( t a = 25 c ) ambient temperature t a ( c) v cb =20v
2SC1847 3 sjd00095bed safe operation area r th ? t 0.001 0.01 0.1 1 10 0.1 1 10 100 collector current i c (a) collector-emitter voltage v ce (v) single pulse t c =25?c t=10ms i cp i c t=1s 10 ? 4 10 ? 3 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 1 1 10 10 2 10 4 10 3 time t (s) thermal resistance r th ( c/w) (1)without heat sink (2)with a 100 100 2mm al heat sink (1) (2)
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